igc11 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l761 3 c , edition 1 , 31 . 10 .200 7 igbt4 low power chip this chip is used for: low / medium power module s features: 1200v trench + field stop technology low switching losses positive temperature coefficient easy paralleling applications: low / medium power drives g c e chip type v ce i cn die size package igc11 t120t6 l 1200v 8 a 3.48 x 3.19 mm 2 sawn on foil mechanical parameter raster size 3.48 x 3.19 emitter pad size 1.965 x 1.716 gate pad size 0.608 x 0.608 area total / active 11.1 / 5.5 mm 2 thickness 115 m wafer size 150 mm flat po sition 0 gr d max.possible chips per wafer 1353 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag ? system suitable for epoxy and soft solder die bonding die bond e lectrically conductive glue or solder wire bond al, <500m reject ink dot s ize ? 0.65mm ; max 1.2mm recommended s torage e nvironment s tore in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
igc11 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l761 3 c , edition 1 , 31 . 10 .200 7 maximum ratings parameter symbol value unit collector - e mitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 24 a gate - e mitter voltage v ge 20 v operating junction temperature t j - 40 ... +175 c short circuit data 2 ) v ge = 15v, v cc = 8 00v, tvj = 150c tp 10 s reverse bias safe operating area 2 ) (rbsoa) i c max = 16 a, v ce max = 1200v, tvj max = 150c 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characteriza tion static characteristics (tested on wafer ) , t j =25 c value parameter symbol conditions min. typ. max. unit collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 0. 5 ma 1200 collector - e mitter saturation voltage v ce (sat) v ge =15v, i c =8 a 1. 6 1.8 5 2. 1 gate - e mitter threshold voltage v ge(th) i c = 0. 3 ma , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 1 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0v 120 na integrated gate res istor r gint - w electrical characteristics ( not subject to production test - verified by design/characterization ) value parameter symbol conditions min. typ. max. unit input capacitance c iss 4 90 output capacitance c oss 50 reverse transfer capacitance c rss v ce =25v, v ge =0v, f=1mhz 30 pf
igc11 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l761 3 c , edition 1 , 31 . 10 .200 7 switching characteristics i nductive l oad ( not subject to production test - verified by design /characterization ) value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) tbd rise time t r tbd turn - off delay time t d(off) tbd fall time t f t j =125 c v cc =600v, i c =8 a, v ge = - 15/15v, r g = --- w tbd ns 1) values also influenced by parasitic l - and c - in measurement and package.
igc11 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l761 3 c , edition 1 , 31 . 10 .200 7 ch ip drawing
igc11 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l761 3 c , edition 1 , 31 . 10 .200 7 fur ther el ectrical characteristics this chip data sheet refers to the device data sheet tbd description aql 0,65 for visual inspection according to failure catalog ue electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffe ld published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved attention please! the information herein is given to describe certain components and shall not be considered as warranted characteri stics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is a n approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see addre ss list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - suppo rt devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons m ay be endangered.
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